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SGT50T65FD1PN - 650V FIELD STOP IGBT

General Description

offers the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

  • 50A, 650V, VCE(sat)(typ. )=2.2V@IC=50A.
  • Low conduction loss.
  • Fast switching.
  • High input impedance 12 3 TO-3PN 123 TO-247-3L 1 23 TO-247S-3L.

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Datasheet Details

Part number SGT50T65FD1PN
Manufacturer Silan Microelectronics
File Size 440.00 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT50T65FD1PN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet 50A, 650V FIELD STOP IGBT C 2 DESCRIPTION 1 SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT technology, G offers the optimum performance for induction Heating, UPS, SMPS and PFC application. 3 E 12 3 TO-3P FEATURES  50A, 650V, VCE(sat)(typ.)=2.2V@IC=50A  Low conduction loss  Fast switching  High input impedance 12 3 TO-3PN 123 TO-247-3L 1 23 TO-247S-3L NOMENCLATURE IGBT series SGT 50 T 65 F D 1 PN Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ X : Field Stop 6 Y : Field Stop 7 Voltage, 65: 650V 120: 1200V Package PN : TO-3P 1,2,3 : Version No.