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SGT50T65FD1P7 - 650V FIELD STOP IGBT

Download the SGT50T65FD1P7 datasheet PDF. This datasheet also covers the SGT50T65FD1PN variant, as both devices belong to the same 650v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

offers the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

  • 50A, 650V, VCE(sat)(typ. )=2.2V@IC=50A.
  • Low conduction loss.
  • Fast switching.
  • High input impedance 12 3 TO-3PN 123 TO-247-3L 1 23 TO-247S-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGT50T65FD1PN-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGT50T65FD1P7
Manufacturer Silan Microelectronics
File Size 440.00 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT50T65FD1P7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet 50A, 650V FIELD STOP IGBT C 2 DESCRIPTION 1 SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT technology, G offers the optimum performance for induction Heating, UPS, SMPS and PFC application. 3 E 12 3 TO-3P FEATURES  50A, 650V, VCE(sat)(typ.)=2.2V@IC=50A  Low conduction loss  Fast switching  High input impedance 12 3 TO-3PN 123 TO-247-3L 1 23 TO-247S-3L NOMENCLATURE IGBT series SGT 50 T 65 F D 1 PN Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ X : Field Stop 6 Y : Field Stop 7 Voltage, 65: 650V 120: 1200V Package PN : TO-3P 1,2,3 : Version No.