EMB12N03V Overview
2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
EMB12N03V datasheet by Excelliance MOS.
| Part number | EMB12N03V |
|---|---|
| Datasheet | EMB12N03V-ExcellianceMOS.pdf |
| File Size | 364.01 KB |
| Manufacturer | Excelliance MOS |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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2Duty cycle < 1% 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Pulse Width ≦ 300 usec, Duty Cycle ≦ 2%.
View all Excelliance MOS datasheets
| Part Number | Description |
|---|---|
| EMB12N03VAT | MOSFET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04V | MOSFET |
| EMB12N06CS | N-Channel FET |
| EMB12N06G | MOSFET |