Datasheet Details
| Part number | EMB12N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.01 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB12N03V-ExcellianceMOS.pdf |
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Overview: EMB12N03V Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
| Part number | EMB12N03V |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.01 KB |
| Description | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | EMB12N03V-ExcellianceMOS.pdf |
|
|
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: N-CH BVDSS RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃ 30V 11.5mΩ 16.0mΩ 39A ID @TA=25℃ 9.9A Single N Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C TC = 100 °C ID 39 24 Continuous Drain Current TA = 25 °C TA = 70 °C ID 9.9 7.9 Pulsed Drain Current1 IDM 70 Avalanche Current IAS 30 Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH L = 0.05mH EAS 45 EAR 22.5 Power Dissipation TC = 25 °C TC = 100 °C PD 31 13 Power Dissipation TA = 25 °C TA = 70 °C PD 2.0 1.3 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=18A, RG=25Ω,Rated VDS=30V N-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 4 Junction-to-Ambient3 t≦10s RθJA Steady-State RθJA 28 62 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
| Part Number | Description |
|---|---|
| EMB12N03VAT | MOSFET |
| EMB12N03A | MOSFET |
| EMB12N03G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04A | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04G | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N04V | MOSFET |
| EMB12N06CS | N-Channel FET |
| EMB12N06G | MOSFET |