EMB12N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Datasheet Details

Part number	EMB12N03G
Manufacturer	Excelliance MOS
File Size	178.92 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	EMB12N03G Datasheet

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Other Datasheets by Excelliance MOS

Part Number	Description
EMB12N03A	MOSFET
EMB12N03H	MOSFET
EMB12N03HR	N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB12N03V	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMB12N03VAT	MOSFET

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EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 12mΩ ID 12A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 12 ID TC = 100 °C 10 IDM 48 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS 7.2 Repetitive Avalanche Energy2 L = 0.05mH EAR 3.6 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.5 1 -55 to 150 100% UIS testing in condition of VD=15V, L=0.