EMB12N03G Description
EMB12N03G N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: 2Duty cycle ≤ 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper. Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
- Part: EMB12N03G
- Manufacturer: Excelliance MOS
- Size: 178.92 KB
Related Excelliance MOS Datasheets
| Part Number | Description |
|---|---|
| EMB12N03A | MOSFET |
| EMB12N03H | MOSFET |
| EMB12N03HR | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03V | Single N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| EMB12N03VAT | MOSFET |