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TTK2837 - Silicon N Channel Field Effect Transistor

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TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications • Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.5 S (typ.) • Low leakage current: IDSS = 10 µA (VDS = 500 V) • Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm 15.9 MAX. 3.2 ± 0.2 2.0 1.0 9.0 4.5 20.0 ± 0.3 3.3 MAX. 2.0 20.5 ± 0.
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