Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
Switching Regulator Applications
- Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.)
- High forward transfer admittance: |Yfs| = 8.5 S (typ.)
- Low leakage current: IDSS = 10 µA (VDS = 500 V)
- Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.9 MAX.
3.2 ± 0.2
2.0 1.0 9.0 4.5
20.0 ± 0.3
3.3 MAX. 2.0
20.5 ±...