Datasheet Summary
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Application for pact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.)
@VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve...