Full PDF Text Transcription for TTK101MFV (Reference)
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TTK101MFV. For precise diagrams, and layout, please refer to the original PDF.
TTK101MFV For ECM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type TTK101MFV Application for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF...
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ion for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.) @VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter Absolute Maximum Ratings (Ta=25°C) Characteristic Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDO -20 V IG 10 mA PD (Note 1) 150 mW Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
TTK101MFV Datasheet
