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PTFA220121M High Power RF LDMOS Field Effect Transistor

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Description

PTFA220121M High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 * 2200 MHz .
The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz.

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Datasheet Specifications

Part number
PTFA220121M
Manufacturer
Wolfspeed
File Size
612.59 KB
Datasheet
PTFA220121M-Wolfspeed.pdf
Description
High Power RF LDMOS Field Effect Transistor

Features

* Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
* 45.5 dBc
* Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
* 44.5 dBc
* Typical CW performance, 2140 MHz, 28 V - POUT = 41.6 d

Applications

* in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a nsmall overmolded plastic package. PTFA220121M Package PG-SON-10 desigTwo-tone Drive-up VDD = 28 V, IDQ = 150 mA, wƒ1 = 876.95 MHz, ƒ2 = 877.05 MHz r ne-10 50 fo-15 45 dEfficiency e-20 40

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