PTFA210701E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 * 2170 MHz PTFA210701E PTFA210701F Descrip.
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 217.

📥 Download Datasheet

PTFA210701E Datasheet Preview — Preview of PTFA210701E PDF

Datasheet Specifications

Part number: PTFA210701E
Manufacturer: Infineon ↗
File Size: 375.96 KB
Datasheet: PTFA210701E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dB

PTFA210701E Distributors

📁 Related Datasheet

PTFA220121M PTFA PTFA080551E PTFA080551F PTFA142401EL PTFA142401FL

📌 All Tags

PTFA210701E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA210701E-like datasheet