PTFA180701E Datasheet - Infineon Technologies

PTFA180701E, Thermally-Enhanced High Power RF LDMOS FET

PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 * 1880 MHz www.DataSheet4U.net .
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

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Datasheet Details

Part number:

PTFA180701E

Manufacturer:

Infineon ↗ Technologies

File Size:

379.16 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM

PTFA180701E Distributors

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PTFA180701E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

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