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PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

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Datasheet Details

Part number: PTFA180701E
Manufacturer: Infineon ↗ Technologies
File Size: 379.16 KB
Datasheet: PTFA180701E_InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

PTFA180701E Product details

Description

The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

Features

include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM Performance VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz 5 50 Features.
40 Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE p.

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Thermally-Enhanced High Power LDMOS FET Infineon Technologies

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