Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.
Features
- include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2
EDGE EVM Performance
VDD = 28 V, IDQ = 550 mA, ƒ = 1836.6 MHz
5 50
Features.
- 40
Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical EDGE p.
