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PTFA041501F

Thermally-Enhanced High Power RF LDMOS FETs

PTFA041501F Features

* Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P

* 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Mode

PTFA041501F General Description

The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and su.

PTFA041501F Datasheet (457.87 KB)

Preview of PTFA041501F PDF

Datasheet Details

Part number:

PTFA041501F

Manufacturer:

Infineon ↗

File Size:

457.87 KB

Description:

Thermally-enhanced high power rf ldmos fets.
PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420

* 500 MHz Descript.

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TAGS

PTFA041501F Thermally-Enhanced High Power LDMOS FETs Infineon

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