PTFA181001E Datasheet - Infineon Technologies

PTFA181001E, Thermally-Enhanced High Power RF LDMOS FET

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 * 1880 MHz www.DataSheet4U.net .
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

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PTFA181001E_InfineonTechnologies.pdf

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Datasheet Details

Part number:

PTFA181001E

Manufacturer:

Infineon ↗ Technologies

File Size:

418.90 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carri

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PTFA181001E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

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