* include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL
* Package PG-63248-2 PTFA181001HL
* Package PG-642
PTFA181001GL Datasheet (335.49 KB)
PTFA181001GL
Infineon ↗ Technologies
335.49 KB
Thermally-enhanced high power rf ldmos fet.
Preliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805
* 1.
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