PTFA181001GL Datasheet, Fet, Infineon Technologies

PTFA181001GL Features

• Fet include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent

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PTFA181001GL

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Infineon ↗ Technologies

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 188

PTFA181001GL Application

• Applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flang

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PTFA181001GL

Infineon Technologies

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