PTFA043002E Datasheet, Fets, Infineon

PTFA043002E Features

  • Fets Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20
  • 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB p

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Part number:

PTFA043002E

Manufacturer:

Infineon ↗

File Size:

326.08kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadca

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PTFA043002E Application

  • Applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures excellent

TAGS

PTFA043002E
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

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Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 32V H-30275-4
DigiKey
PTFA043002E-V1
0 In Stock
0
Unit Price : $0
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