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PTFA043002E

Thermally-Enhanced High Power RF LDMOS FETs

PTFA043002E Features

* Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20

* 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent <

* 33 dBc Integrated ESD protection: Hu

PTFA043002E General Description

The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermally-enhanced package provides the coolest operation available. Full gold metallization ensures.

PTFA043002E Datasheet (326.08 KB)

Preview of PTFA043002E PDF

Datasheet Details

Part number:

PTFA043002E

Manufacturer:

Infineon ↗

File Size:

326.08 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA043002E Thermally-Enhanced High Power LDMOS FETs Infineon

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