FETs Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva

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(t) §upertex inc. VN01 04N6 / VN0104N7 VN01 06N6 / VN0106N7 Ordering Information BVoss I BVDGS 40V SOV '14-pin Side Brazed Ceramic Dip. N-Channel En

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TT

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild S

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STF1

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CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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Elektronische Bauelemente S2N7002T-C 115mA, 60V, RDS(ON) 7.5Ω N-Channel Plastic-Encapsulate MOSFETS FEATURES  Low On-Resistance  Low Gate Threshol

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2N3821 | 2N3822 N-CHANNEL JFETS - 1 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/375 LOW ON RESISTANCE FAST SWITCHING

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Process 55 2N5361-64 N-Channel JFETs General Description The 2N5361 thru 2N5364 series of N-channel JFETs is characterized for general purpose audi

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Process 90 2N5245-47 N-Channel JFETs General Description The 2N5245 thru 2N5247 series of N-channel JFETs is designed for common-source or common-g

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FDMS1D2N03DSD POWERTRENCH) Power Clip 30 V Asymmetric Dual N‐Channel MOSFETs General Description This device includes two specialized N-Channel MOSFET

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IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell struct

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2N/PN/SST4117A Series Vishay Siliconix N-Channel JFETs 2N4117A 2N4118A 2N4119A PRODUCT SUMMARY Part Number 4117 4118 4119 PN4117A SST4117 PN4118A SS

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FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The D

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