20N50 Datasheet - OGFD

20N50 N-Channel MOSFETS

The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery.

20N50 Features

* 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V

* Low gate charge (typical 70Nc)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 20N50 TO-3P 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 A

20N50-OGFD.pdf