PDS3807 Datasheet (Potens semiconductor)

PDS3807, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDS3807 Features

* -30V,-7A, RDS(ON) =23mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications SOP8 Pin Configuration D1D2D2 D1 G1 D1 G2 Applications D2

* MB / VGA / Vcore

* POL Applications

* Load Switch

* LED Application S1G1S2G2 S1