Datasheet Summary
30V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D DD D G
SS S
BVDSS 30V
RDSON 4.2mΩ
ID 30A
Features
- 30V, 30A, RDS(ON) =4.2mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Applications
- MB / VGA / Vcore
- POL Applications
-...