Datasheet4U Logo Datasheet4U.com

PDS3904 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 30V, 30A, RDS(ON) =4.2mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet preview – PDS3904

Datasheet Details

Part number PDS3904
Manufacturer Potens semiconductor
File Size 577.69 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDS3904 Datasheet
Additional preview pages of the PDS3904 datasheet.

📁 Similar Datasheet

  • PDS3100 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • PDS3100Q - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes)
  • PDS310W - Switching Diode (Prisemi)
  • PDS312W - Switching Diode (Prisemi)
  • PDS315W - Switching Diode (Prisemi)
  • PDS3200 - 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • PDS320W - Switching Diode (Prisemi)
  • PDS32W - Switching Diode (Prisemi)
  • PDS340 - 3A SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • PDS340Q - 3A SCHOTTKY BARRIER RECTIFIER (Diodes)
Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
30V N-Channel MOSFETs PDS3904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 4.2mΩ ID 30A Features  30V, 30A, RDS(ON) =4.
Published: |