Datasheet Summary
30V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D DD D SS SG
BVDSS -30V
RDSON 9.5m
ID -13A
Features
- -30V,-13A, RDS(ON) =9.5mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
Applications
- MB / VGA / Vcore
- POL Applications
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