Datasheet Summary
30V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS -30V
RDSON 16m
ID -10A
Features
- -30V,-10A, RDS(ON) =16mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
SOP8 Pin Configuration
D1D1 D2 D2
G1
D1 G2
Applications
D2
- MB / VGA / Vcore
- POL Applications
-...