PDS3805 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-10A, RDS(ON) =16mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDS3805 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3805
Manufacturer	Potens semiconductor
File Size	467.78 KB
Description	P-Channel MOSFETs
Datasheet	PDS3805 Datasheet

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30V P-Channel MOSFETs PDS3805 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS -30V RDSON 16m ID -10A Features  -30V,-10A, RDS(ON) =16mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.