Datasheet Summary
30V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS 30V
RDSON 11m
ID 9A
Features
- 30V,9A, RDS(ON) =11mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Dual SOP8 Pin Configuration
D2 D2 D1 D1
D1
G1
G2 G1S2 S1
S1
G2
Applications
D2
- MB / VGA / Vcore
- POL Applications
-...