Datasheet Summary
30V N+P Dual Channel MOSFETs
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration D1D2D2
D1 S1G1S2G2 G1
D1 G2
S1
D2 S2
BVDSS 30V -30V
RDSON 13m 30m
ID 10A -6.5A
Features
- Fast switching
- Green Device Available
- Suit for 4.5V Gate Drive Applications
Applications
- DC Fan
- Motor Drive Applications
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