PDS3710 - N+P Channel MOSFETs

Potens semiconductor

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

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PDS3710 n+p channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3710
Manufacturer	Potens semiconductor
File Size	494.95 KB
Description	N+P Channel MOSFETs
Datasheet	PDS3710 Datasheet

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Other Datasheets by Potens semiconductor

Part Number	Description
PDS3712	N+P Channel MOSFETs
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Full PDF Text Transcription (Reference)

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30V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D1D2D2 D1 S1G1S2G2 G1 D1 G2 S1 D2 S2 PDS3710 BVDSS 30V -30V RDSON 13m 30m ID 10A -6.5A Features  Fast switching  Green Device Available  Suit for 4.