Datasheet4U Logo Datasheet4U.com

PDS3807 - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-7A, RDS(ON) =23mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number PDS3807
Manufacturer Potens semiconductor
File Size 719.62 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDS3807 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PDS38W Switching Diode Prisemi
PDS3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Diodes Incorporated
PDS3100Q 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Diodes
PDS310W Switching Diode Prisemi
PDS312W Switching Diode Prisemi

Other Datasheets by Potens semiconductor

Part Number Description
PDS3805 P-Channel MOSFETs
PDS3808 N-Channel MOSFETs
PDS3810 Dual N-Channel MOSFETs
PDS3812 Dual N-Channel MOSFETs
PDS3710 N+P Channel MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS -30V RDSON 23m ID -7A Features  -30V,-7A, RDS(ON) =23mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.