Datasheet Summary
30V P-Channel MOSFETs
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS -30V
RDSON 23m
ID -7A
Features
- -30V,-7A, RDS(ON) =23mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
SOP8 Pin Configuration
D1D2D2 D1
G1
D1 G2
Applications
D2
- MB / VGA / Vcore
- POL Applications
- Load...