Datasheet Summary
30V N+P Dual Channel MOSFETs
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D2 D2 D1 D1
G2 G1 S2 G1 S1
D1 G2
S1
D2 2
S2
BVDSS 30V -30V
RDSON 20m 50m
ID 8A -5.5A
Features
- Fast switching
- Green Device Available
- Suit for 4.5V Gate Drive Applications
Applications
- DC Fan
- Motor Drive...