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PTFA182001E Thermally-Enhanced High Power RF LDMOS FET

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Description

PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 * 1880 MHz www.DataSheet4U.net.
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz.

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Features

* include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 160

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