* include input and output matching, and thermally-enhanced single-ended package with a slotted flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA182001E Package H-30260-2 2-Tone Drive-up VDD = 30 V, IDQ = 160
PTFA182001E Datasheet (271.73 KB)
PTFA182001E
Infineon ↗ Technologies
271.73 KB
Thermally-enhanced high power rf ldmos fet.
PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805
* 1880 MHz
www.DataSheet4U.net.
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