PTFA210601E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 * 2170 MHz .
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz.

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Datasheet Specifications

Part number: PTFA210601E
Manufacturer: Infineon ↗
File Size: 229.08 KB
Datasheet: PTFA210601E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 (dB

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PTFA210601E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA210601E-like datasheet