PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTFA210601E Datasheet Preview — Preview of PTFA210601E PDF

Datasheet Details

Part number	PTFA210601E
Manufacturer	Infineon ↗
File Size	229.08 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA210601E-Infineon.pdf

PTFA210601E Product details

Description

The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.

Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210601E Package H-36265-2 PTFA210601F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 550 mA, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 35 -30 Efficiency 30 -35 IM3 -40.

📁 PTFA210601E Similar Datasheet

PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET
PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET
PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET
PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET
PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET
PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET

Published: Feb 21, 2016 |