PTFA210301E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 * 2170 MHz .
The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.

📥 Download Datasheet

PTFA210301E Datasheet Preview — Preview of PTFA210301E PDF

Datasheet Specifications

Part number: PTFA210301E
Manufacturer: Infineon ↗
File Size: 188.43 KB
Datasheet: PTFA210301E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Thermally-enhanced packaging, Pb-free and RoHS-compliant
* Broadband internal matching
* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =
* 50 dBc - Adjacent channel power =

Applications

* It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA210301E Package H-30265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency

PTFA210301E Distributors

📁 Related Datasheet

PTFA220121M PTFA PTFA080551E PTFA080551F PTFA142401EL PTFA142401FL

📌 All Tags

PTFA210301E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA210301E-like datasheet