PTFA210301E Datasheet - Infineon

PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.

It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Thermally-enhanced packaging provides the coolest operation available.

Full gold metallization ensures

PTFA210301E Features

* Thermally-enhanced packaging, Pb-free and RoHS-compliant

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =

* 50 dBc - Adjacent channel power =

Datasheet Details

PTFA210301E

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Thermally-enhanced high power rf ldmos fet.

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