PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFA210301E
Manufacturer	Infineon ↗
File Size	188.43 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA210301E-Infineon.pdf

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications.

Thermally-enhanced packaging, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 33 dBm - Linear Gain = 16.5 dB - Intermodulation distortion =.
50 dBc - Adjacent channel power =.
52 dBc.
Typical CW performance, 2170 MHz, 28 V - Output power at P.
1dB = 40 W - Efficiency = 59%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).

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Published: Feb 21, 2016 |