PTFA211001E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 * 2170 MHz .
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.

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Datasheet Specifications

Part number: PTFA211001E
Manufacturer: Infineon ↗
File Size: 213.18 KB
Datasheet: PTFA211001E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Thermally-enhanced package, Pb-free and RoHScompliant
* Broadband internal matching
* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =
* 37 dBc - Adjacent c

Applications

* It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA211001E Package H-30248-2 IM3 (dBc), ACPR (dBc) Drain Effic

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PTFA211001E Thermally-Enhanced High Power LDMOS FET Infineon

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