PTFA211001E Datasheet - Infineon

PTFA211001E Thermally-Enhanced High Power RF LDMOS FET

The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization e.

PTFA211001E Features

* Thermally-enhanced package, Pb-free and RoHScompliant

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 23 W - Linear Gain = 16 dB - Efficiency = 28.5% - Intermodulation distortion =

* 37 dBc - Adjacent c

PTFA211001E-Infineon.pdf