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PTFA211801E Datasheet - Infineon

PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.

It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perform

PTFA211801E Features

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =

* 36 dBc - Adjacent channel power =

* 41 dBc

* Typical CW per

PTFA211801E-Infineon.pdf

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Datasheet Details

Part number:

PTFA211801E

Manufacturer:

Infineon ↗

File Size:

480.12 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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