PTFA211801E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

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The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.

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Datasheet Specifications

Part number: PTFA211801E
Manufacturer: Infineon ↗
File Size: 480.12 KB
Datasheet: PTFA211801E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Broadband internal matching
* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =
* 36 dBc - Adjacent channel power =
* 41 dBc
* Typical CW per

Applications

* It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.2

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PTFA211801E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA211801E-like datasheet