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PTFA211801E

Thermally-Enhanced High Power RF LDMOS FET

PTFA211801E Features

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =

* 36 dBc - Adjacent channel power =

* 41 dBc

* Typical CW per

PTFA211801E General Description

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perform.

PTFA211801E Datasheet (480.12 KB)

Preview of PTFA211801E PDF

Datasheet Details

Part number:

PTFA211801E

Manufacturer:

Infineon ↗

File Size:

480.12 KB

Description:

Thermally-enhanced high power rf ldmos fet.
IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced Hig.

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PTFA211801E Thermally-Enhanced High Power LDMOS FET Infineon

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