PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFA211801E
Manufacturer	Infineon ↗
File Size	480.12 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA211801E-Infineon.pdf

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.

Broadband internal matching.
Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =.
36 dBc - Adjacent channel power =.
41 dBc.
Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 52%.
Integrated ESD protection.
Excellent thermal stability, low HCI drift.
Capable of handling 10:.

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Published: Feb 21, 2016 |