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PTFA211801F

Thermally-Enhanced High Power RF LDMOS FET

PTFA211801F Features

* Thermally-enhanced packages, Pb-free and RoHS-compliant

* Broadband internal matching

* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =

* 36 dBc - Ad

PTFA211801F General Description

The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA2118.

PTFA211801F Datasheet (257.39 KB)

Preview of PTFA211801F PDF

Datasheet Details

Part number:

PTFA211801F

Manufacturer:

Infineon ↗

File Size:

257.39 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFA211801F Thermally-Enhanced High Power LDMOS FET Infineon

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