PTFA211801F Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 * 2170 MHz .
The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.

📥 Download Datasheet

PTFA211801F Datasheet Preview — Preview of PTFA211801F PDF

Datasheet Specifications

Part number: PTFA211801F
Manufacturer: Infineon ↗
File Size: 257.39 KB
Datasheet: PTFA211801F-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* Thermally-enhanced packages, Pb-free and RoHS-compliant
* Broadband internal matching
* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 45.5 dBm - Linear Gain = 15.5 dB - Efficiency = 27.5% - Intermodulation distortion =
* 36 dBc - Ad

Applications

* They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. PTFA211801E Package H-36260-2 PTFA211801F Package H-37260-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD =

PTFA211801F Distributors

📁 Related Datasheet

PTFA220121M PTFA PTFA080551E PTFA080551F PTFA142401EL PTFA142401FL

📌 All Tags

PTFA211801F Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA211801F-like datasheet