PTFA210701F, PTFA210701E Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 * 2170 MHz PTFA210701E PTFA210701F Descrip.
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 217.

📥 Download Datasheet

PTFA210701F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA210701F, PTFA210701E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA210701F, PTFA210701E
Manufacturer: Infineon ↗
File Size: 375.96 KB
Datasheet: PTFA210701E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA210701F, PTFA210701E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dB

PTFA210701F Distributors

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PTFA210701E Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFA210701F-like datasheet