Datasheet4U Logo Datasheet4U.com

PTFA220041M

High Power RF LDMOS Field Effect Transistor

PTFA220041M Features

* Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =

* 44 dBc

* Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB

* Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57%

PTFA220041M General Description

The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. PTFA220041M Package PG-SON-10 Gain (dB) Effic.

PTFA220041M Datasheet (323.98 KB)

Preview of PTFA220041M PDF

Datasheet Details

Part number:

PTFA220041M

Manufacturer:

Infineon ↗

File Size:

323.98 KB

Description:

High power rf ldmos field effect transistor.

📁 Related Datasheet

PTFA220081M High Power RF LDMOS Field Effect Transistor (Infineon)

PTFA220121M High Power RF LDMOS Field Effect Transistor (Infineon)

PTFA220121M High Power RF LDMOS Field Effect Transistor (Wolfspeed)

PTFA210301E Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA210601E Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA210601F Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA210701E Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA210701F Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA211001E Thermally-Enhanced High Power RF LDMOS FET (Infineon)

PTFA211801E Thermally-Enhanced High Power RF LDMOS FET (Infineon)

TAGS

PTFA220041M High Power LDMOS Field Effect Transistor Infineon

Image Gallery

PTFA220041M Datasheet Preview Page 2 PTFA220041M Datasheet Preview Page 3

PTFA220041M Distributor