PTFA220041M High Power RF LDMOS Field Effect Transistor

Infineon

Description

PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 * 2200 MHz .
The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range.

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Datasheet Specifications

Part number: PTFA220041M
Manufacturer: Infineon ↗
File Size: 323.98 KB
Datasheet: PTFA220041M-Infineon.pdf
Description: High Power RF LDMOS Field Effect Transistor

Features

* Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR =
* 44 dBc
* Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB
* Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57%

Applications

* in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. PTFA220041M Package PG-SON-10 Gain (dB) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz 21 60

PTFA220041M Distributors

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PTFA220041M High Power LDMOS Field Effect Transistor Infineon

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