PTFA220081M High Power RF LDMOS Field Effect Transistor

Infineon

Description

PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 * 2200 MHz .
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.

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Datasheet Specifications

Part number: PTFA220081M
Manufacturer: Infineon ↗
File Size: 734.80 KB
Datasheet: PTFA220081M-Infineon.pdf
Description: High Power RF LDMOS Field Effect Transistor

Features

* Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
* 40 dBc
* Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB
* Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15

Applications

* with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220081M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.5 M Hz, ƒ2 = 940.5 M Hz

PTFA220081M Distributors

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PTFA220081M High Power LDMOS Field Effect Transistor Infineon

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