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PTFA220081M

High Power RF LDMOS Field Effect Transistor

PTFA220081M Features

* Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =

* 40 dBc

* Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Efficiency = 59% - Gain = 20 dB

* Typical CW performance, 2140 MHz, 28 V - POUT = 40 dBm - Efficiency = 50% - Gain = 15

PTFA220081M General Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFA220081M Package PG-SON-10 IMD (dBc) Effic.

PTFA220081M Datasheet (734.80 KB)

Preview of PTFA220081M PDF

Datasheet Details

Part number:

PTFA220081M

Manufacturer:

Infineon ↗

File Size:

734.80 KB

Description:

High power rf ldmos field effect transistor.

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PTFA220081M High Power LDMOS Field Effect Transistor Infineon

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