PTFA220081M Datasheet, Transistor, Infineon

PTFA220081M Features

• Transistor
• Typical two-carrier WCDMA performance, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
    –40 dBc
• Typical CW performance, 940 MHz, 28 V - POUT = 40 dBm - Effici

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PTFA220081M

Manufacturer:

Infineon ↗

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📄 Datasheet

Description:

High power rf ldmos field effect transistor. The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. T

PTFA220081M Application

• Applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small

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PTFA220081M

Infineon

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