PTFC261402FC - Thermally-Enhanced High Power RF LDMOS FET

Wolfspeed

PTFC261402FC Datasheet Preview — Preview of PTFC261402FC PDF

Datasheet Details

Part number	PTFC261402FC
Manufacturer	Wolfspeed
File Size	505.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC261402FC-Wolfspeed.pdf

PTFC261402FC Product details

Description

The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC261402FC Package H-37248-4 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 7.5 dB PAR, 3.84 MHz BW 24 60 Efficiency 20 Gain 40 16 20 12 0 PAR @ 0.01% CCDF 8 -20 4 -40.

📁 PTFC261402FC Similar Datasheet

PTFC260202FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC270051M - High Power RF LDMOS Field Effect Transistor (Infineon)
PTFC101C1G0 - Platinum Temperature Sensors (TE)
PTF - Metal Film Resistors (Vishay)
PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)

Other Datasheets by Wolfspeed

PTFC270101M - High Power RF LDMOS Field Effect Transistor
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs
PTFA220121M - High Power RF LDMOS Field Effect Transistor
PTFB201402FC - High Power RF LDMOS Field Effect Transistor

Published: Jun 25, 2023 |