PTF080451 Datasheet - Infineon Technologies AG

PTF080451, LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869 *960 MHz .
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

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Datasheet Details

Part number:

PTF080451

Manufacturer:

Infineon ↗ Technologies AG

File Size:

158.52 KB

Description:

LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

Features

* Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Ex

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PTF080451 LDMOS Power Field Effect Transistor 869-960 MHz Infineon Technologies AG

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