PTF080601E - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Product Overview

Infineon Technologies AG

Part number	PTF080601E
Manufacturer	Infineon Technologies AG
File Size	293.74 KB
Description	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Datasheet	PTF080601E Datasheet
Additional preview pages of the PTF080601E datasheet.

The PTF080601 is a 60 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90.
Efficiency (%).

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Published: Apr 16, 2005 |