Part number:
PTF080601E
Manufacturer:
Infineon ↗ Technologies AG
File Size:
293.74 KB
Description:
Ldmos rf power field effect transistor 60 w/ 860-960 mhz.
* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exce
PTF080601E Datasheet (293.74 KB)
PTF080601E
Infineon ↗ Technologies AG
293.74 KB
Ldmos rf power field effect transistor 60 w/ 860-960 mhz.
📁 Related Datasheet
PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)
PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
PTF080451 LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz (Infineon Technologies AG)
PTF080901E LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz (Infineon Technologies AG)
PTF080901F LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz (Infineon Technologies AG)
TAGS
Image Gallery