PTF080601E Datasheet - Infineon Technologies AG

PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

The PTF080601 is a 60 *W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power VDD = 28 V, IDQ = .

PTF080601E Features

* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P

* 1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exce

PTF080601E_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

PTF080601E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

293.74 KB

Description:

Ldmos rf power field effect transistor 60 w/ 860-960 mhz.

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PTF080601E PTF080601E LDMOS Power Field Effect Transistor 860-960 MHz Infineon Technologies AG

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