PTF080601E Datasheet - Infineon Technologies AG

PTF080601E, LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860 *960 MHz .
The PTF080601 is a 60. W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

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Datasheet Details

Part number:

PTF080601E

Manufacturer:

Infineon ↗ Technologies AG

File Size:

293.74 KB

Description:

LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Features

* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exce

Applications

* in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46

PTF080601E Distributors

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PTF080601E LDMOS Power Field Effect Transistor 860-960 MHz Infineon Technologies AG

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