PTF080601E Datasheet (Infineon Technologies AG) - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

PTF080601E, LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

The PTF080601 is a 60 *W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.

Output Power VDD = 28 V, IDQ =

PTF080601E Features

* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P

* 1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Exce