Datasheet Specifications
- Part number
- PTF080601A
- Manufacturer
- Infineon ↗ Technologies AG
- File Size
- 293.74 KB
- Datasheet
- PTF080601A_InfineonTechnologiesAG.pdf
- Description
- LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Description
Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860 *960 MHz .Features
* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at PApplications
* in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46PTF080601A Distributors
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