PTF080601A Datasheet, Mhz, Infineon Technologies AG

PTF080601A Features

• Mhz
• Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
  &n

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Part number:

PTF080601A

Manufacturer:

Infineon ↗ Technologies AG

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📄 Datasheet

Description:

Ldmos rf power field effect transistor 60 w/ 860-960 mhz. The PTF080601 is a 60  –W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz

PTF080601A Application

• Applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum

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PTF080601A

Infineon Technologies AG

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