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GTVA261701FA

Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA261701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 60 24

GTVA261701FA Datasheet (743.61 KB)

Preview of GTVA261701FA PDF

Datasheet Details

Part number:

GTVA261701FA

Manufacturer:

Wolfspeed

File Size:

743.61 KB

Description:

Thermally-enhanced high power rf gan on sic hemt.

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GTVA261701FA Thermally-Enhanced High Power GaN SiC HEMT Wolfspeed

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