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PTFB211501E Datasheet - Infineon

PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs

PTFB211501E Features

* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR =

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Datasheet Details

Part number:

PTFB211501E

Manufacturer:

Infineon ↗

File Size:

349.42 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFB211501E PTFB211501E Thermally-Enhanced High Power LDMOS FETs Infineon

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