PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 * 2170 MHz .
The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110.

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Datasheet Specifications

Part number: PTFB211501E
Manufacturer: Infineon ↗
File Size: 349.42 KB
Datasheet: PTFB211501E-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs

Features

* include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. PTFB211501E Package H-36248-2 PTFB211501F Package H-37248-2 ACP (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive Up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz 3GPP WCDMA, PAR =

Applications

* in the 2110

PTFB211501E Distributors

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PTFB211501E Thermally-Enhanced High Power LDMOS FETs Infineon

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