PTFB210801FA Datasheet - Infineon

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PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 * 2170 MHz .
The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

PTFB210801FA-Infineon.pdf

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Datasheet Details

Part number:

PTFB210801FA

Manufacturer:

Infineon ↗

File Size:

468.56 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package H-37265-2 ACPR (dBc) Efficiency (%) Two-carrier

PTFB210801FA Distributors

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PTFB210801FA Thermally-Enhanced High Power LDMOS FET Infineon

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