PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Features
* include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package H-37265-2 ACPR (dBc) Efficiency (%) Two-carrier
