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PTFB191501F, PTFB191501E Datasheet - Infineon Technologies

PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs

PTFB191501F Features

* include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-

PTFB191501E-InfineonTechnologies.pdf

This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E. Please refer to the document for exact specifications by model.
PTFB191501F Datasheet Preview Page 2 PTFB191501F Datasheet Preview Page 3

Datasheet Details

Part number:

PTFB191501F, PTFB191501E

Manufacturer:

Infineon ↗ Technologies

File Size:

322.39 KB

Description:

Thermally-enhanced high power rf ldmos fets.

Note:

This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E.
Please refer to the document for exact specifications by model.

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PTFB191501F PTFB191501E Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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