PTFB191501F, PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs

Infineon Technologies

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 * 1990 MHz .
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

📥 Download Datasheet

PTFB191501F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFB191501F, PTFB191501E
Manufacturer: Infineon ↗ Technologies
File Size: 322.39 KB
Datasheet: PTFB191501E-InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-

PTFB191501F Distributors

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PTFB191501E Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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