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PTFB191501F, PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs

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This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFB191501F, PTFB191501E
Manufacturer
Infineon ↗ Technologies
File Size
322.39 KB
Datasheet
PTFB191501E-InfineonTechnologies.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFB191501F, PTFB191501E.
Please refer to the document for exact specifications by model.

PTFB191501F Product details

Description

The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

Features

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Thermally-Enhanced High Power LDMOS FETs Infineon Technologies
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