Part number:
PTFB091802FC
Manufacturer:
File Size:
352.65 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDM
PTFB091802FC Datasheet (352.65 KB)
PTFB091802FC
352.65 KB
Thermally-enhanced high power rf ldmos fet.
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