Datasheet Specifications
- Part number
- PTFB091802FC
- Manufacturer
- Infineon ↗
- File Size
- 352.65 KB
- Datasheet
- PTFB091802FC-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 * 960 MHz .
Features
* include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMPTFB091802FC Distributors
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