PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Features
* include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDM
