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PTFB091802FC Datasheet - Infineon

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET

PTFB091802FC Features

* include high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091802FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDM

PTFB091802FC-Infineon.pdf

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Datasheet Details

Part number:

PTFB091802FC

Manufacturer:

Infineon ↗

File Size:

352.65 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFB091802FC PTFB091802FC Thermally-Enhanced High Power LDMOS FET Infineon

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