PTFB192503FL Features
* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250
PTFB192503EL-InfineonTechnologies.pdf
Datasheet Details
PTFB192503FL, PTFB192503EL
Infineon ↗ Technologies
442.12 KB
Thermally-enhanced high power rf ldmos fets.
This datasheet PDF includes multiple part numbers: PTFB192503FL, PTFB192503EL.
Please refer to the document for exact specifications by model.
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