PTFB192503FL, PTFB192503EL Datasheet - Infineon Technologies

PTFB192503FL, PTFB192503EL, Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz .
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 199.

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PTFB192503EL-InfineonTechnologies.pdf

PTFB192503FL Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFB192503FL, PTFB192503EL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

PTFB192503FL, PTFB192503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

442.12 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Note:

This datasheet PDF includes multiple part numbers: PTFB192503FL, PTFB192503EL.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250

PTFB192503FL Distributors

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PTFB192503EL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

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