PTFB183404F Datasheet, Transistors, Infineon

PTFB183404F Features

• Transistors include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide

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PTFB183404F

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📄 Datasheet

Description:

High power rf ldmos field effect transistors. The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in t

PTFB183404F Application

• Applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slott

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PTFB183404F

Infineon

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