PTFB090901FA, PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 * 960 MHz .
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power ampliﬁer applications in the 920 to 960 MHz.

📥 Download Datasheet

PTFB090901FA Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFB090901FA, PTFB090901EA. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFB090901FA, PTFB090901EA
Manufacturer: Infineon ↗
File Size: 223.44 KB
Datasheet: PTFB090901EA-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFB090901FA, PTFB090901EA.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, high gain and thermally-enhanced packages. Manufactured with Inﬁneon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA G

PTFB090901FA Distributors

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PTFB090901EA Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFB090901FA-like datasheet