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PTFB192503EL Datasheet - Infineon Technologies

PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250

PTFB192503EL-InfineonTechnologies.pdf

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Datasheet Details

Part number:

PTFB192503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

442.12 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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