Part number:
PTFB192503EL
Manufacturer:
Infineon ↗ Technologies
File Size:
442.12 KB
Description:
Thermally-enhanced high power rf ldmos fets.
PTFB192503EL Datasheet (442.12 KB)
* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250
PTFB192503EL Datasheet (442.12 KB)
PTFB192503EL
Infineon ↗ Technologies
442.12 KB
Thermally-enhanced high power rf ldmos fets.
📁 Related Datasheet
PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB191501F Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB183404E High Power RF LDMOS Field Effect Transistors (Infineon)
PTFB183404F High Power RF LDMOS Field Effect Transistors (Infineon)
PTFB183408SV High Power RF LDMOS Field Effect Transistor (Infineon Technologies)
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
