PTFB192503EL Datasheet - Infineon Technologies

PTFB192503EL, Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz .
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 199.

datasheet Preview Page 1 from Datasheet4u.com

PTFB192503EL-InfineonTechnologies.pdf

PTFB192503EL Datasheet Preview — Preview of PTFB192503EL PDF

Datasheet Details

Part number:

PTFB192503EL

Manufacturer:

Infineon ↗ Technologies

File Size:

442.12 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250

PTFB192503EL Distributors

📁 Related Datasheet

PTFB193404F PTFB183404E PTFB183404F PTFB090901EA PTFB090901FA PTFB091507FH

📌 All Tags

PTFB192503EL Thermally-Enhanced High Power LDMOS FETs Infineon Technologies

Infineon Technologies PTFB192503EL-like datasheet