Datasheet Specifications
- Part number
- PTFB192503EL
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 442.12 KB
- Datasheet
- PTFB192503EL-InfineonTechnologies.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FETs
Description
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 * 1990 MHz .
Features
* include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB192503EL Package H-33288-6 PTFB19250PTFB192503EL Distributors
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