Part number:
PTFB091507FH
Manufacturer:
File Size:
473.18 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power
PTFB091507FH Datasheet (473.18 KB)
PTFB091507FH
473.18 KB
Thermally-enhanced high power rf ldmos fet.
📁 Related Datasheet
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFB182503EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB183404E High Power RF LDMOS Field Effect Transistors (Infineon)
PTFB183404F High Power RF LDMOS Field Effect Transistors (Infineon)