PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 * 960 MHz .
The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band.

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Datasheet Specifications

Part number: PTFB091507FH
Manufacturer: Infineon ↗
File Size: 473.18 KB
Datasheet: PTFB091507FH-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power

PTFB091507FH Distributors

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PTFB091507FH Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFB091507FH-like datasheet