PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH Features
* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power
