PTFB191501E Datasheet, Fets, Infineon Technologies

PTFB191501E Features

• Fets include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pr

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PTFB191501E

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Infineon ↗ Technologies

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to

PTFB191501E Application

• Applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earl

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PTFB191501E

Infineon Technologies

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