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PTFB191501E Thermally-Enhanced High Power RF LDMOS FETs

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Description

Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 * 1990 MHz .
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz.

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Features

* include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-

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