PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 * 960 MHz .
The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.

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Datasheet Specifications

Part number: PTFB093608SV
Manufacturer: Infineon ↗
File Size: 563.21 KB
Datasheet: PTFB093608SV-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB093608SV Package H-37275G-6/2 Gain (dB) Drain Efficiency (%) Two-c

PTFB093608SV Distributors

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PTFB093608SV Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFB093608SV-like datasheet