PTFB183404E Datasheet, Transistors, Infineon

PTFB183404E Features

• Transistors include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide

PDF File Details

Part number:

PTFB183404E

Manufacturer:

Infineon ↗

File Size:

590.61kb

Download:

📄 Datasheet

Description:

High power rf ldmos field effect transistors. The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in t

PTFB183404E Application

• Applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slott

TAGS

PTFB183404E

Infineon

📁 Related Datasheet

PTFB183404F - High Power RF LDMOS Field Effect Transistors (Infineon)
PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt.

PTFB183408SV - High Power RF LDMOS Field Effect Transistor (Infineon Technologies)
PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended .

PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w.

PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w.

PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB19.

PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB19.

PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-.

PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-.

PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended fo.

PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.